A P-doped polycrystalline silicon-nitride (n-poly-SiN _x ) as the electron selective collection layer in a tunnel oxide passivated contact (TOPCon) solar cell is reported. The nitrogen content is controlled by the active gas ratio of R = NH₃/(SiH₄ + NH₃) during the plasma-enhanced chemical vapor deposition (PECVD) process. The effects of R ratio on the material's composition, crystallinity, surface passivation, and contact resistivity are investigated. The poly-SiN _x contact exhibits improved surface passivation in comparison with the reference poly-Si without N incorporation. The best double-sided passivated n-type alkaline-polished crystalline silicon wafer with the n-poly-SiN _x /SiO _x manifests the highest implied open-circuit voltage (iV _oc) of ≈745 mV, with the corresponding single-sided saturated current density of 1.7 fA cm⁻² and the effective lifetime (τ _eff) of 10 ms at the injection level of ≈1 × 10¹⁵cm⁻³. In contrast, the controlled sample with an n-poly-Si/SiO _x passivation contact has a maximal iV _oc of 738 mV. However, the primary drawback of the N doping is to raise the contact resistivity, but which is still in an acceptable range and shows little effect on the performance of solar cell with full-area contact. The proof-of-concept TOPCon solar cell using the n-poly-SiN _x /SiO _x passivating contact has achieved an efficiency of 23.88%, indicating the potential of the n-poly-SiN _x for high-efficiency TOPCon solar cells.

中文翻译：

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与磷掺杂多晶氮化硅的钝化接触具有 745 mV 的优异隐含开路电压及其在 23.88% 效率的 TOPCon 太阳能电池中的应用

报道了一种 P 掺杂的多晶氮化硅 (n-poly-SiN _x ) 作为隧道氧化物钝化接触 (TOPCon) 太阳能电池中的电子选择收集层。在等离子体增强化学气相沉积 (PECVD) 工艺期间，氮含量由R  = NH ₃ /(SiH ₄  + NH ₃ )的活性气体比率控制。研究了R比对材料成分、结晶度、表面钝化和接触电阻率的影响。多晶SiN _x 与未掺入 N 的参考多晶硅相比，接触显示出改善的表面钝化。具有 n-poly-SiN _x /SiO _x的最佳双面钝化 n 型碱抛光晶体硅片表现出最高的隐含开路电压 (i V _oc ) ≈745 mV，相应的单面1.7 fA cm ^{-2 的}饱和电流密度和≈1 × 10 ¹⁵ cm ^-3注入水平下 10 ms的有效寿命 ( τ _eff ) 。相比之下，具有 n-poly-Si/SiO _x钝化触点的受控样品具有最大 i V _oc 738 mV。然而，N掺杂的主要缺点是提高了接触电阻率，但仍在可接受的范围内，对全面积接触太阳能电池的性能影响不大。使用 n-poly-SiN _x /SiO _x钝化触点的概念验证 TOPCon 太阳能电池实现了 23.88% 的效率，表明 n-poly-SiN _x用于高效 TOPCon 太阳能电池的潜力。