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Photodetector without Electron Transport Layer Based on Hexane-1,6-Diammonium Pentaiodobismuth (HDA-BiI5) Molecular Semiconductor
Coatings ( IF 3.4 ) Pub Date : 2021-09-12 , DOI: 10.3390/coatings11091099
Yifei Wang , Xiaoping Zou , Jialin Zhu , Chunqian Zhang , Jin Cheng , Junqi Wang , Xiaolan Wang , Xiaotong Li , Keke Song , Baokai Ren , Junming Li

With the development of the semiconductor industry, research on photoelectronic devices has been emphasized. In this paper, a molecular semiconductor material with a narrow bandgap of hexane-1,6-diammonium pentaiodobismuth (HDA-BiI5) was utilized to prepare photodetectors without electron transport layers. Using a single light source, the effects of different wavelengths and different powers on the photoresponsivity, switching ratio, specific detectivity, and external quantum efficiency of the device were investigated. It is demonstrated that this device has excellent responsivity, specific detectivity, stability, and repeatability, and this work will help expand the application of molecular semiconductor materials for photodetection.

中文翻译:

基于 Hexane-1,6-Diamino Pentaiodobismuth (HDA-BiI5) 分子半导体的无电子传输层光电探测器

随着半导体工业的发展,对光电子器件的研究越来越受到重视。在本文中,利用具有窄带隙的己烷-1,6-二铵五碘铋(HDA-BiI 5)的分子半导体材料来制备没有电子传输层的光电探测器。使用单一光源,研究了不同波长和不同功率对器件光响应性、开关比、比探测率和外量子效率的影响。证明该器件具有优异的响应性、比探测性、稳定性和可重复性,该工作将有助于扩大分子半导体材料在光电探测中的应用。
更新日期:2021-09-12
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