Abstract

ZnO nanorods arrays, with high crystal quality has been successfully synthesized by sol-gel assisted hydrothermal method and their photoelectric property has been studied for toward a UV detection. The results show that the diameter of nanorods with high crystal quality samples becomes thinner from the bottom to the top, and the middle diameter of that is 120 nm. In addition, the photoelectric performance of ZnO nanorods arrays shows that the dark current of the sample shows the phenomenon of forward conduction and reverse cutoff, indicating that the sample has good heterogeneous p-n junction between the n-type ZnO nanorods arrays and p-type Si substrate. The dark current of the ZnO nanorods arrays photoelectric device is 4.89 µA, the photocurrent of that is 996.33 µA, and its photoelectric sensitivity of that is 203.7. The photoelectric performance shows the potential application of ZnO nanorods arrays for nanoscale UV photodetector.

摘要

已通过溶胶-凝胶辅助水热法成功合成了具有高晶体质量的 ZnO 纳米棒阵列，并对其光电特性进行了紫外检测研究。结果表明，具有高晶体质量样品的纳米棒直径从下到上变细，中间直径为120 nm。此外，ZnO纳米棒阵列的光电性能表明，样品的暗电流呈现正向传导和反向截止的现象，说明样品在n型ZnO纳米棒阵列与p型Si之间具有良好的异质pn结基质。ZnO纳米棒阵列光电器件的暗电流为4.89 µA，其光电流为996.33 µA，其光电灵敏度为203.7。