Composite Memristors by Nanoscale Modification of Hf/Ta Anodic Oxides,The Journal of Physical Chemistry Letters

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Composite Memristors by Nanoscale Modification of Hf/Ta Anodic Oxides
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2021-09-09 , DOI: 10.1021/acs.jpclett.1c02346
Ivana Zrinski ₁ , Alexey Minenkov ₂ , Cezarina Cela Mardare _{1,

3} , Achim Walter Hassel _{1,

3} , Andrei Ionut Mardare ₁

Affiliation

Composite memristors based on anodic oxidation of Hf superimposed on Ta thin films are studied. A layered structure is obtained by successive sputtering of Ta and Hf thin films. The deposition geometry ensured components’ thickness gradient profiles (wedges) aligned in opposite directions. Anodization in citrate buffer electrolyte leads to a nanoscale columnar structuring of Ta₂O₅ in HfO₂ due to the higher electrical resistance of the latter. Following the less resistive path, the ionic current forces Ta oxide to locally grow toward the electrolyte interface according to the Rayleigh–Taylor principle. The obtained composite oxide memristive properties are studied as a function of the Hf/Ta thickness ratio. One pronounced zone prominent for memristive applications is found for ratios between 4 and 5. Here, unipolar and bipolar memristors are found, with remarkable endurance and retention capabilities. This is discussed in the frame of conductive filament formation preferentially along the interfaces between oxides.

中文翻译：

Hf/Ta 阳极氧化物纳米级改性的复合忆阻器

研究了基于 Hf 阳极氧化叠加在 Ta 薄膜上的复合忆阻器。通过连续溅射 Ta 和 Hf 薄膜获得层状结构。沉积几何形状确保组件的厚度梯度分布（楔形）在相反方向对齐。柠檬酸盐缓冲电解质中的阳极氧化导致HfO _{2 中}的 Ta ₂ O ₅纳米级柱状结构由于后者的电阻较高。根据瑞利-泰勒原理，沿着电阻较小的路径，离子电流迫使氧化钽局部向电解质界面生长。所获得的复合氧化物忆阻特性作为 Hf/Ta 厚度比的函数进行研究。对于 4 到 5 之间的比率，发现了一个对忆阻应用突出的明显区域。在这里，发现了单极和双极忆阻器，具有出色的耐久性和保持能力。这在优先沿着氧化物之间的界面形成导电细丝的框架中讨论。

更新日期：2021-09-23

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