The characteristics of a flexible write-once-read-many-times (WORM) memory fabricated with monolayered 0-dimensional (0D) CdSe–ZnS quantum dots (QDs) layers sandwiched between two insulating 2-dimensional (2D) hexagonal boron nitride (hBN) multilayers were investigated by electrical measurement method. The hBN/QDs monolayer/hBN structure was fabricated in a vertical stacked structure using a technique which control the formation of the QDs monolayer. QDs monolayer was formed by electrostatic interaction between the negative charge group on the CdSe–ZnS QDs surface and the positive charge group on the hBN surface. The device has a WORM characteristic due to the presence of QDs in the current-voltage (I–V) measurement. When a bias is applied, carriers were initially trapped by tunneling due to the QDs and then a conductive filament was formed in the hBN, which were not detrapped and exhibit characteristics of write-once-read-many-times memory. The maximum ON/OFF ratio of the current for the devices was as large as 4 × 10, and the endurance was 5 × 10⁴ cycles, and a retention time was larger than 1 × 10⁵ s. In order to explain the carrier transport mechanism and conductive filament of the WORM memory device caused by QDs, it through various methods such as I–V fitting data, simulation, and conductive AFM. Unlike the conventional conductive filament mechanism, through random diffusion such as Ag filament, the Au/hBN/QD/hBN/ITO/PET structures implemented a consistent conductive filament using Au metal and QDs active layer.

由夹在两个绝缘二维 (2D) 六方氮化硼之间的单层 0 维 (0D) CdSe-ZnS 量子点 (QD) 层制成的灵活的一次写入多次读取 (WORM) 存储器的特性。 hBN) 多层膜通过电测量方法进行了研究。hBN/QDs 单层/hBN 结构使用控制 QDs 单层形成的技术在垂直堆叠结构中制造。量子点单层是由 CdSe-ZnS 量子点表面的负电荷基团与 hBN 表面的正电荷基团之间的静电相互作用形成的。由于在电流-电压 (I-V) 测量中存在 QD，该器件具有 WORM 特性。当施加偏置时，由于量子点，载流子最初被隧道效应捕获，然后在 hBN 中形成导电细丝，导电细丝没有被释放，并表现出一次写入多次读取的存储特性。器件的最大电流ON/OFF比高达4×10，耐久性为5×10⁴个循环，保留时间大于 1 × 10 ⁵  s。为了解释量子点引起的 WORM 存储器件的载流子传输机制和导电细丝，通过 I-V 拟合数据、模拟和导电 AFM 等各种方法。与传统的导电细丝机制不同，通过随机扩散（如 Ag 细丝），Au/hBN/QD/hBN/ITO/PET 结构使用 Au 金属和 QDs 活性层实现了一致的导电细丝。