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Orbital occupancy and hybridization in strainedSrVO3epitaxial films
Physical Review Materials ( IF 3.1 ) Pub Date : 2021-09-09 , DOI: 10.1103/physrevmaterials.5.095002
Mathieu Mirjolet 1 , Hari Babu Vasili 2 , Adrian Valadkhani 3 , José Santiso 4 , Vladislav Borisov 5 , Pierluigi Gargiani 2 , Manuel Valvidares 2 , Roser Valentí 3 , Josep Fontcuberta 1
Affiliation  

Oxygen packaging in transition metal oxides determines the metal-oxygen hybridization and electronic occupation at metal orbitals. Strontium vanadate (SrVO3), having a single electron in a 3d orbital, is thought to be the simplest example of strongly correlated metallic oxides. Here, we determine the effects of epitaxial strain on the electronic properties of SrVO3 thin films, where the metal-oxide sublattice is corner connected. Using x-ray absorption and x-ray linear dichroism at the VL2,3 and O K edges, it is observed that tensile or compressive epitaxial strain change the hierarchy of orbitals within the t2g and eg manifolds. Data show a remarkable 2p3d hybridization, as well as a strain-induced reordering of the V3d(t2g,eg) orbitals. The latter is itself accompanied by a consequent change of hybridization that modulates the hybrid π* and σ* orbitals and the carrier population at the metal ions, challenging a rigid band picture.

中文翻译:

应变SrVO3外延薄膜中的轨道占据和杂化

过渡金属氧化物中的氧包装决定了金属轨道上的金属-氧杂化和电子占据。钒酸锶(静脉曲张3), 在一个单电子 3d轨道,被认为是强相关金属氧化物的最简单例子。在这里,我们确定了外延应变对电子特性的影响静脉曲张3薄膜,其中金属氧化物亚晶格是角连接的。使用 x 射线吸收和 x 射线线性二色性2,3 边缘,观察到拉伸或压缩外延应变改变了轨道内的轨道层次 2G电子G流形。数据显示显着2-3d 杂交,以及应变诱导的重新排序 3d(2G,电子G)轨道。后者本身伴随着随之而来的杂交变化,它调节了杂交π*σ* 轨道和金属离子的载流子数量,挑战了刚性带图。
更新日期:2021-09-10
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