Zinc-doped monoclinic gallium oxide (β-Ga₂O₃:Zn) has semi-insulating properties that could make it a preferred material as a substrate for power devices. Infrared and UV/Visible spectroscopy were used to investigate the defect properties of bulk β-Ga₂O₃:Zn crystals. As-grown crystals contain a single O-H stretching mode at 3486.7 cm⁻¹ due to a neutral ZnH complex. A deuterium-annealed sample displays the corresponding O-D stretching mode at 2582.9 cm⁻¹, confirming the O-H assignment. A strong Ir⁴⁺ electronic transition at 5147.6 cm⁻¹ is also observed, along with sidebands attributed to ZnIr pairs. These sidebands show distinct differences compared with Mg-doped samples; most importantly, several peaks are attributed to Ir⁴⁺ paired with a Zn on the tetrahedral Ga(I) site. Annealing under an oxygen atmosphere produced an insulating material with a resistance above 1 TΩ.

中文翻译：

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β-Ga2O3 中的锌-氢和锌-铱对

锌掺杂的单斜氧化镓 (β-Ga ₂ O ₃ :Zn) 具有半绝缘特性，使其成为功率器件基板的首选材料。红外和紫外/可见光谱用于研究块状 β-Ga ₂ O ₃ :Zn 晶体的缺陷特性。由于中性的 ZnH 复合物，生长的晶体在 3486.7 cm ^-1处包含单一的 OH 拉伸模式。氘退火样品在 2582.9 cm ^-1处显示相应的 OD 拉伸模式，确认了 OH 分配。5147.6 cm ^-1处的强 Ir ⁴⁺电子跃迁也观察到，以及归因于 ZnIr 对的边带。与 Mg 掺杂的样品相比，这些边带显示出明显的差异；最重要的是，几个峰归因于与四面体 Ga(I) 位点上的 Zn 配对的Ir ⁴⁺。在氧气气氛下退火产生电阻高于 1 TΩ 的绝缘材料。