The kinetics and the mechanism of oxidation of ceramics based on HfB₂ and SiC, manufactured by elemental self-propagating high-temperature synthesis followed by hot pressing were investigated. The synthesis product contained HfC_(x) and HfO₂ as impurity phases. Depending on the ratio between the main components, the samples were characterized by high structural and chemical homogeneity, porosity of 3–6 vol%, hardness up to 29 GPa, bending strength of 500–600 MPa, fracture toughness of 5.6–8.9 MPa × m^1/2, and thermal conductivity of 86.0–89.7 W/(m × K). The oxidation was performed under static conditions at 1650 °C and upon exposure to a high-enthalpy gas flow. A dense layer consisting of HfO₂/HfSiO₄ grains formed on the surface of the ceramics during both oxidation conditions; the space between the grains was filled with amorphous SiO₂–B₂O₃. The best heat resistance was observed for the ceramics with 16 wt% SiC for static conditions and 8 wt% SiC for gas-dynamic conditions.

研究了基于HfB ₂和SiC的陶瓷的动力学和氧化机理，该陶瓷通过元素自蔓延高温合成然后热压制备。合成产物含有 HfC _(x)和 HfO ₂作为杂质相。根据主要组分之间的比例，样品具有高结构和化学均匀性，孔隙率为 3-6 vol%，硬度高达 29 GPa，弯曲强度为 500-600 MPa，断裂韧性为 5.6-8.9 MPa × m ^1/2，导热系数为 86.0–89.7 W/(m × K)。氧化是在 1650 °C 的静态条件下进行的，并在暴露于高焓气流时进行。由 HfO ₂ /HfSiO组成的致密层在两种氧化条件下，陶瓷表面形成了_{4 个}晶粒；晶粒之间的空间充满了无定形 SiO ₂ -B ₂ O ₃。对于静态条件下含 16 wt% SiC 和气体动态条件下含 8 wt% SiC 的陶瓷，观察到最佳耐热性。