Although many efforts have been spent on graphene growth, there is still a lack of comprehensive understanding about the growth mechanism and precise control for different morphologies of graphene domains synthesis though carbon precursor. In this work, controlled single-crystal graphene monolayer domains with different morphologies of four, six and multiple symmetry have been achieved just by staged modulation of methane flow through low-pressure chemical vapor deposition method on copper. The growth rate can also be regulated by the methane flow, and the highest growth rate can reach 25 μm/min corresponding to the multiple-dendritic shape. The schematic structure of the different shapes with active sites has been proposed to understand the formation mechanism of different graphene domains. Synthesis single crystal graphene with various morphologies will be of great promising potential applications in catalytic and many other fields.

尽管已经在石墨烯的生长上付出了很多努力，但仍然缺乏对通过碳前驱体合成石墨烯域的不同形态的生长机制和精确控制的全面了解。在这项工作中，通过在铜上通过低压化学气相沉积方法对甲烷流进行分阶段调制，已经实现了具有四、六和多重对称不同形态的受控单晶石墨烯单层域。生长速率也可以通过甲烷流量调节，最高生长速率可达25 μm/min，对应多枝晶形状。已经提出了具有活性位点的不同形状的示意性结构，以了解不同石墨烯域的形成机制。