Direct Charge Trapping Multilevel Memory with Graphdiyne/MoS2 Van der Waals Heterostructure,Advanced Science

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Direct Charge Trapping Multilevel Memory with Graphdiyne/MoS2 Van der Waals Heterostructure
Advanced Science ( IF 14.3 ) Pub Date : 2021-09-09 , DOI: 10.1002/advs.202101417
Jialing Wen _{1,

2} , Wenhui Tang _{1,

2} , Zhuo Kang _{1,

2} , Qingliang Liao _{1,

2} , Mengyu Hong _{1,

2} , Junli Du _{1,

2} , Xiankun Zhang _{1,

2} , Huihui Yu _{1,

2} , Haonan Si _{1,

2} , Zheng Zhang _{1,

2} , Yue Zhang _{1,

2}

Affiliation

Direct charge trapping memory, a new concept memory without any dielectric, has begun to attract attention. However, such memory is still at the incipient stage, of which the charge-trapping capability depends on localized electronic states that originated from the limited surface functional groups. To further advance such memory, a material with rich hybrid states is highly desired. Here, a van der Waals heterostructure design is proposed utilizing the 2D graphdiyne (GDY) which possesses abundant hybrid states with different chemical groups. In order to form the desirable van der Waals coupling, the plasma etching method is used to rapidly achieve the ultrathin 2D GDY with smooth surface for the first time. With the plasma-treated 2D GDY as charge-trapping layer, a direct charge-trapping memory based on GDY/MoS₂ is constructed. This bilayer memory is featured with large memory window (90 V) and high degree of modulation (on/off ratio around 8 × 10⁷). Two operating mode can be achieved and data storage capability of 9 and 10 current levels can be obtained, respectively, in electronic and opto-electronic mode. This GDY/MoS₂ memory introduces a novel application of GDY as rich states charge-trapping center and offers a new strategy of realizing high performance dielectric-free electronics, such as optical memories and artificial synaptic.

中文翻译：

具有石墨炔/MoS2范德华异质结构的直接电荷捕获多级存储器

直接电荷捕获存储器作为一种无需任何电介质的新概念存储器开始引起人们的关注。然而，这种存储器仍处于初级阶段，其电荷捕获能力取决于源自有限表面官能团的局域电子态。为了进一步推进这种记忆，非常需要一种具有丰富混合态的材料。在这里，提出了利用二维石墨二炔（GDY）的范德华异质结构设计，其具有丰富的不同化学基团的杂化态。为了形成理想的范德华耦合，首次采用等离子体刻蚀方法快速实现了表面光滑的超薄二维GDY。以等离子体处理的2D GDY作为电荷捕获层，构建了基于GDY/MoS ₂的直接电荷捕获存储器。该双层存储器具有大存储窗口（90 V）和高调制程度（开/关比约为 8 × 10 ⁷）。可以实现两种工作模式，在电子模式和光电模式下分别可以获得9级和10级电流的数据存储能力。这种GDY/MoS ₂存储器引入了GDY作为富态电荷捕获中心的新颖应用，并提供了实现高性能无电介质电子器件（例如光学存储器和人工突触）的新策略。

更新日期：2021-11-04

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