In this work, aluminum nitride (AlN) layers were grown on sapphire substrate with different times and temperatures of nitridation through metal organics chemical vapor deposition growth technique. Besides, during the growth process, trimethylaluminum (TMAl) preflow was introduced, in particular, after the nucleation. From x-ray diffraction measurement in (002) and (102) reflections, it was found that an average threading dislocation density (TDD) for the AlN layer without nitridation was around 1.07 × 10⁹ cm⁻². By applying the nitridation for 20 minutes at 850 ºC, the average TDD in the corresponding AlN layer reduced down to ∼9.33 × 10⁸ cm⁻². Moreover, the layer exhibited a smoother surface, as observed from atomic force microscopy measurement. Overall, the results from this work suggested that a proper time and temperature of nitridation with the introduction of TMAl preflow could be a promising alternative for obtaining a high quality AlN layer.

在这项工作中，氮化铝 (AlN) 层通过金属有机物化学气相沉积生长技术在不同时间和氮化温度的蓝宝石衬底上生长。此外，在生长过程中，特别是在成核之后引入了三甲基铝（TMAl）预流。从 (002) 和 (102) 反射中的 X 射线衍射测量发现，未氮化的 AlN 层的平均穿透位错密度 (TDD) 约为 1.07 × 10 ⁹ cm ^-2。通过在 850 ºC 下进行 20 分钟的氮化，相应的 AlN 层中的平均 TDD 降低至 ~9.33 × 10 ⁸ cm ^-2. 此外，从原子力显微镜测量中观察到，该层表现出更光滑的表面。总的来说，这项工作的结果表明，引入 TMAl 预流的适当的氮化时间和温度可能是获得高质量 AlN 层的有前途的替代方案。