In this work, photodetectors based on undoped (ZO) and fluorine-doped ZnO (FZO) nanostructured films were fabricated on silicon substrates using the hydrothermal method. The morphological, compositional, structural changes, and UV detection properties were investigated. FESEM and TEM revealed well-arranged vertically aligned nanorod (NRs) growth on the substrate. XRD analysis revealed a hexagonal structure of the ZnO phase with a strong (002) predominance of the peak plane. XPS and EDX analyses have shown the presence of fluorine doping. F-doping increases the band gap value of the growing material from 3.26 to 3.28 eV. The photocurrent value has improved significantly from 7.37 μA to 624.37 μA at 4 V. The response speed, responsivity, detectivity, and external quantum efficiency of ZO and FZO were also investigated and comparisons were made. We found that the FZO sample demonstrates enhanced photodetection parameter values at low bias voltage, showing great potential in optoelectronic applications.

在这项工作中，使用水热法在硅衬底上制造了基于未掺杂 (ZO) 和掺氟 ZnO (FZO) 纳米结构薄膜的光电探测器。研究了形态、组成、结构变化和紫外检测特性。FESEM 和 TEM 显示基板上排列整齐的垂直排列的纳米棒 (NRs) 生长。XRD 分析揭示了 ZnO 相的六方结构，峰平面具有强 (002) 优势。XPS 和 EDX 分析表明存在氟掺杂。F 掺杂将生长材料的带隙值从 3.26 eV 增加到 3.28 eV。光电流值在 4 V 时从 7.37 μA 显着提高到 624.37 μA。还研究并比较了 ZO 和 FZO 的响应速度、响应度、探测率和外量子效率。