Undoped and Ni-doped thin films of cerium dioxide have been deposited by spray pyrolysis technique on the glass substrate at the optimized temperature (450 ± 5) °C. Thin films Ce_1-xNi_xO₂ doped by different concentrations of Ni was characterized by X-ray diffraction. Raman analysis showed a peak at 461 ± 1 cm⁻¹ position for the undoped film, which corresponds to the active mode (F_2g mode) of the cubic fluorite structure. SEM images showed that the particles have a uniform spherical shape. EDS data have confirmed all elements (Ce, Ni and O) existence. Optical properties of samples show a decrease in band gap energy with increasing the nickel rate. Cyclic voltammetry indicates that the storage capacity of samples increases as the Ni rate increases. The EIS of CeO₂/ITO electrodes displays a small semicircular at high frequency. The theoretical results obtained using WIEN2k match well with the experimental ones.

在优化温度 (450 ± 5) °C 下，通过喷雾热解技术在玻璃基板上沉积了未掺杂和 Ni 掺杂的二氧化铈薄膜。通过X射线衍射表征了由不同浓度的Ni掺杂的Ce _1-x Ni _x O ₂薄膜。拉曼分析显示未掺杂薄膜在 461 ± 1 cm ^-1位置有一个峰值，这对应于有源模式 (F _2gmode) 的立方萤石结构。SEM图像显示颗粒具有均匀的球形。EDS 数据已确认所有元素（Ce、Ni 和 O）都存在。样品的光学特性表明，随着镍速率的增加，带隙能量降低。循环伏安法表明样品的存储容量随着 Ni 速率的增加而增加。CeO ₂ /ITO 电极的EIS在高频下显示出一个小的半圆形。使用 WIEN2k 获得的理论结果与实验结果吻合良好。