We design and experimentally demonstrate compact and robust fast quasi-adiabatic (FAQUAD) couplers for silicon-on-insulator (SOI) strip waveguides. The mode evolution region of the coupler is optimized by the FAQUAD protocol, achieving shortcuts to adiabatic mode evolution in a short length of 11.7 $\mathrm{\mu }$m. 3-dB couplers with measured bandwidths (3 dB ± 1 dB) larger than 75 nm over temperature range from 20 °C to 50 °C are designed and fabricated using standard CMOS-compatible optical lithography, with the smallest device footprint of 53.7 × 4 μm². Devices with longer mode evolution regions are also evaluated by simulations and experiments. 3-dB couplers with a footprint of 87.6 × 4 μm² show larger than 85 nm bandwidths (3 dB ± 0.5 dB) over the same 30 °C range.

我们设计并通过实验证明了用于绝缘体上硅 (SOI) 条形波导的紧凑且坚固的快速准绝热 (FAQUAD) 耦合器。耦合器的模态演化区域通过FAQUAD协议进行优化，在11.7的短长度内实现绝热模态演化的捷径 $\mathrm{\mu }$米。在 20 °C 至 50 °C 的温度范围内，测量带宽 (3 dB ± 1 dB) 大于 75 nm 的 3-dB 耦合器是使用标准 CMOS 兼容光刻设计和制造的，最小器件尺寸为 53.7 × 4微米²。具有更长模式演化区域的设备也通过模拟和实验进行评估。封装尺寸为 87.6 × 4 μm ^{2 的}3 dB 耦合器在相同的 30 °C 范围内显示出大于 85 nm 的带宽 (3 dB ± 0.5 dB)。