Through a series of single-scratch experiments, the damaged process of diamond grit and the material removal mechanism of single crystal silicon carbide (SiC) were investigated. The <111> and <110> planes of single diamond grits were used to scratch the carbon (C) face and silicon (Si) face of single crystal SiC, respectively. The damaged process and corresponding typical damaged morphology of diamond grits on different planes were analyzed. The material removal mechanism of single crystal SiC (C face and Si face) is analyzed. The results show that the contact width and the breaking angle were determined as the key damaged parameters of diamond grit by the analysis of the damaged process. However, the key factor to reduce surface damage is the state of the micro-edges that appear on the crystal plane of the diamond grit in contact with the workpiece during the scratching process.

通过一系列的单划痕实验，研究了金刚石磨粒的损伤过程和单晶碳化硅（SiC）的材料去除机理。单晶金刚石磨粒的 <111> 和 <110> 面分别用于划伤单晶 SiC 的碳 (C) 面和硅 (Si) 面。分析了金刚石磨粒在不同平面上的损伤过程及相应的典型损伤形貌。分析了单晶SiC（C面和Si面）的材料去除机理。结果表明，通过损伤过程分析，确定接触宽度和断裂角是金刚石磨粒的关键损伤参数。然而，