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Influence of Mg doping on the ultrafast electron dynamics of VO2 films
Applied Physics A ( IF 2.5 ) Pub Date : 2021-09-09 , DOI: 10.1007/s00339-021-04886-y
Dimitris Karanikolopoulos 1, 2 , Emmanouil Gagaoudakis 1 , Sotiris Droulias 1 , Maria Polychronaki 1, 3 , Georgios E. Katsoprinakis 1, 2 , Elias Aperathitis 1 , Vassilis Binas 1, 2 , Constantinos Kalpouzos 1 , George Kiriakidis 1 , Alexandros Lappas 1 , Panagiotis A. Loukakos 1 , Dimitrios Louloudakis 4 , Kyriakos Mouratis 4, 5 , Dimitra Vernardou 4, 6, 7 , Emmanuel Koudoumas 4, 6
Affiliation  

Broadband time-resolved measurements of pristine and Mg-doped vanadium dioxide (VO2) films are presented herein. The two films were synthesized on float glass and K-glass (SnO2 coated) substrates, respectively. Spectral and temporal dynamics of the insulator to metal transition are accessed via femtosecond pump-probe spectroscopy. Reflection and transmission signals were recorded during sample perturbation by high photon energy, 3.1 eV, laser pulses for below and above the transition threshold values of the excitation fluence. Changes of the spectral dynamics due to photoexcitation are tracked throughout the visible spectrum by use of broadband white-light supercontinuum pulses. The study demonstrates a faster temporal response of the Mg-doped film across the probed spectrum. The system is photoexcited to the metallic state reaching a plateau value in signal transmission within less than 5 ps post-pulse perturbation. These optimized trends of the Mg-doped VO2 films hold promise for applications necessitating ultrafast optical switching capabilities.



中文翻译:

Mg掺杂对VO2薄膜超快电子动力学的影响

本文介绍了原始和 Mg 掺杂的二氧化钒 (VO 2 ) 薄膜的宽带时间分辨测量。这两种薄膜是在浮法玻璃和 K 玻璃(SnO 2涂层)基板,分别。绝缘体到金属转变的光谱和时间动态可通过飞秒泵浦探针光谱获得。反射和传输信号在样品扰动期间被高光子能量,3.1 eV,激光脉冲记录在激发能量密度的跃迁阈值之下和之上。通过使用宽带白光超连续谱脉冲,可以在整个可见光谱中跟踪由于光激发引起的光谱动态变化。该研究表明,Mg 掺杂薄膜在整个探测光谱中具有更快的时间响应。该系统被光激发到金属态,在小于 5 ps 的脉冲后扰动内达到信号传输的平台值。Mg掺杂VO 2 的这些优化趋势 薄膜有望用于需要超快光开关功能的应用。

更新日期:2021-09-09
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