Polycrystalline AlN grown on Si₃N₄ by metal organic chemical vapor deposition is found to be wet etched by EKC265™ polymer strip solution, in which the active component is hydroxylamine (H₃NO). The etch rate shows to be strongly dependent on surface oxides that can be dissolved in deionized water by hydrolysis. An etch rate of 1.2 nm/min was achieved for an AlN surface in optimal condition. The etching process appears to be mainly anisotropic, etching along the grain boundaries of the AlN layer, and being highly selective over silicon nitride, silicon dioxide and aluminum oxide.

中文翻译：

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金属有机化学气相沉积法生长的多晶 AlN 薄膜的选择性湿法刻蚀和水解

发现通过金属有机化学气相沉积在 Si ₃ N ₄上生长的多晶 AlN被 EKC265™ 聚合物剥离溶液湿蚀刻，其中活性成分是羟胺 (H ₃ NO)。蚀刻速率显示强烈依赖于可通过水解溶解在去离子水中的表面氧化物。在最佳条件下，AlN 表面的蚀刻速率达到 1.2 nm/min。蚀刻工艺似乎主要是各向异性的，沿着 AlN 层的晶界蚀刻，并且对氮化硅、二氧化硅和氧化铝具有高度选择性。