We studied the metal gate work function of different metal electrode and high-k dielectric combinations by monitoring the flat band voltage shift with dielectric thicknesses using capacitance–voltage measurements. We investigated the impact of different thermal treatments on the work function and linked any shift in the work function, leading to an effective work function, to the dipole formation at the metal/high-k and/or high-k/SiO₂ interface. We corroborated the findings with the erase performance of metal/high-k/ONO/Si (MHONOS) capacitors that are identical to the gate stack in three-dimensional (3D) NAND flash. We demonstrate that though the work function extraction is convoluted by the dipole formation, the erase performance is not significantly affected by it.

中文翻译：

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了解金属栅极功函数偏移的起源及其对 3D NAND 闪存中擦除性能的影响

我们通过使用电容-电压测量来监测平带电压随电介质厚度的变化，研究了不同金属电极和高 k 电介质组合的金属栅极功函数。我们研究了不同热处理对功函数的影响，并将导致有效功函数的功函数的任何变化与金属/高 k 和/或高 k/SiO ₂界面处的偶极子形成联系起来。我们用与三维 (3D) NAND 闪存中的栅极堆叠相同的金属/高 k/ONO/Si (MHONOS) 电容器的擦除性能证实了这些发现。我们证明，尽管偶极子形成使功函数提取变得复杂，但擦除性能并未受到显着影响。