Dislocations, linear defects in a crystalline lattice characterized by their slip systems, can provide a record of grain internal deformation. Comprehensive examination of this record has been limited by intrinsic limitations of the observational methods. Transmission electron microscopy reveals individual dislocations, but images only a few square \(\upmu\)m of sample. Oxidative decoration requires involved sample preparation and has uncertainties in detection of all dislocations and their types. The possibility of mapping dislocation density and slip systems by conventional (Hough-transform based) EBSD is investigated here with naturally and experimentally deformed San Carlos olivine single crystals. Geometry and dislocation structures of crystals deformed in orientations designed to activate particular slip systems were previously analyzed by TEM and oxidative decoration. A curvature tensor is calculated from changes in orientation of the crystal lattice, which is inverted to calculate density of geometrically necessary dislocations with the Matlab Toolbox MTEX. Densities of individual dislocation types along with misorientation axes are compared to orientation change measured on the deformed crystals. After filtering (denoising), noise floor and calculated dislocation densities are comparable to those reported from high resolution EBSD mapping. For samples deformed in [110]c and [011]c orientations EBSD mapping confirms [100](010) and [001](010), respectively, as the dominant slip systems. EBSD mapping thus enables relatively efficient observation of dislocation structures associated with intracrystalline deformation, both distributed, and localized at sub-boundaries, over substantially larger areas than has previously been possible. This will enable mapping of dislocation structures in both naturally and experimentally deformed polycrystals, with potentially new insights into deformation processes in Earth’s upper mantle.

位错，以滑移系统为特征的晶格中的线性缺陷，可以提供晶粒内部变形的记录。对该记录的综合检查受到观察方法固有局限性的限制。透射电子显微镜显示单个位错，但图像只有几个正方形\(\upmu\)m 个样本。氧化修饰需要涉及样品制备，并且在检测所有位错及其类型时具有不确定性。这里用自然和实验变形的圣卡洛斯橄榄石单晶研究了通过传统（基于霍夫变换）EBSD 绘制位错密度和滑移系统的可能性。先前通过 TEM 和氧化装饰分析了在旨在激活特定滑移系统的方向上变形的晶体的几何和位错结构。曲率张量是根据晶格取向的变化计算的，通过 Matlab 工具箱 MTEX​​ 将其反转以计算几何必要位错的密度。将单个位错类型的密度以及取向错误与在变形晶体上测量的取向变化进行比较。滤波（去噪）后，本底噪声和计算出的位错密度与高分辨率 EBSD 映射报告的结果相当。对于在 [110]c 和 [011]c 方向变形的样品，EBSD 映射分别确认 [100](010) 和 [001](010) 作为主要滑动系统。因此，EBSD 映射能够相对有效地观察与晶内变形相关的位错结构，无论是分布的还是局部于子边界的，比以前可能的区域大得多。这将能够在自然和实验变形的多晶中绘制位错结构，