In this study, we present a high-k composite of TiO₂–ZrO₂ (TZO) acted as charge trapping layer for non-volatile memory devices with a structure of p-Si/Al₂O₃/TZO/Al₂O₃/metal and investigate the effect of rapid thermal annealing (RTA) on the storage capability. The device after annealing at 800 °C for 90 s in O₂ ambient demonstrates a large memory window of ~ 15.5 V under a sweeping voltage of ± 12 V, which is extremely attractive in low-power applications. In addition, a high trapped charge density of ~ 1.55 × 10¹³ cm⁻² was obtained in the fabricated device. The results of XPS analysis show that the peaks of Zr3d_3/2 and Zr3d_5/2 are shifted to the direction of low binding energy after RTA at high temperature, and it is found that Ti³⁺ and Ti⁴⁺ exist in the TZO films after rapid thermal annealing at 800 °C, which helps to improve the charge trapping ability of the composite dielectric.

在本研究中，我们提出了一种 TiO ₂ –ZrO ₂ (TZO)的高 k 复合材料，用作具有 p-Si/Al ₂ O ₃ /TZO/Al ₂ O ₃结构的非易失性存储器件的电荷俘获层/metal 并研究快速热退火 (RTA) 对存储能力的影响。该器件在 O ₂环境中在 800 °C 下退火 90 秒后，在± 12 V 的扫描电压下显示出 ~ 15.5 V 的大内存窗口，这在低功率应用中极具吸引力。此外，~ 1.55 × 10 ¹³  cm ^-2的高俘获电荷密度在制造的设备中获得。XPS分析结果表明，高温下RTA后Zr3d _3/2和Zr3d _5/2峰向低结合能方向移动，发现TZO中存在Ti ³⁺和Ti ⁴⁺ 800℃快速热退火后的薄膜，有助于提高复合电介质的电荷俘获能力。