We report the strong dependence of resistance on uniaxial strain in monolayer WSe₂ at various temperatures, where the gauge factor can reach as large as 2400. The observation of strain-dependent resistance and giant gauge factor is attributed to the emergence of nonzero Berry curvature dipole. Upon increasing strain, Berry curvature dipole can generate net orbital magnetization, which would introduce additional magnetic scattering, decreasing the mobility and thus conductivity. Our work demonstrates the strain engineering of Berry curvature and thus the transport properties, making monolayer WSe₂ potential for application in the highly sensitive strain sensors and high-performance flexible electronics.

我们报告了在不同温度下单层 WSe ₂中电阻对单轴应变的强烈依赖性，其中应变系数可以达到 2400。应变相关电阻和巨应变系数的观察归因于非零贝里曲率偶极子的出现. 随着应变的增加，贝里曲率偶极子可以产生净轨道磁化，这会引入额外的磁散射，降低迁移率，从而降低电导率。我们的工作展示了 Berry 曲率的应变工程以及传输特性，使单层 WSe ₂具有在高灵敏度应变传感器和高性能柔性电子设备中的应用潜力。