Mechanism of defect evolution in H+ and He+ implanted InPProject supported by the National Key R&D Program of China (Grant No. 2017YFE0131300), the National Natural Science Foundation of China (Grant Nos. 61874128, 61851406, and 11705262), Frontier Science Key Program of Chinese Academy of Sciences (Grant Nos. QYZDY-SSW-JSC032 and ZDBS-LYJSC009), Chinese-Austrian Cooperative R&D Project (Grant No. GJHZ201950), Program of Shanghai Academic Research Leader (Grant No. 19XD1404600), K. C. Wong Education Foundation (Grant No. GJTD-2019-11), and NCBiR within the Polish-China (Grant No. WPC/130/NIR-Si/2018).,Chinese Physics B

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Mechanism of defect evolution in H+ and He+ implanted InPProject supported by the National Key R&D Program of China (Grant No. 2017YFE0131300), the National Natural Science Foundation of China (Grant Nos. 61874128, 61851406, and 11705262), Frontier Science Key Program of Chinese Academy of Sciences (Grant Nos. QYZDY-SSW-JSC032 and ZDBS-LYJSC009), Chinese-Austrian Cooperative R&D Project (Grant No. GJHZ201950), Program of Shanghai Academic Research Leader (Grant No. 19XD1404600), K. C. Wong Education Foundation (Grant No. GJTD-2019-11), and NCBiR within the Polish-China (Grant No. WPC/130/NIR-Si/2018).
Chinese Physics B ( IF 1.5 ) Pub Date : 2021-08-27 , DOI: 10.1088/1674-1056/abf640
Ren-Jie Liu _{1,

2} , Jia-Jie Lin _{3,

4} , N Daghbouj ₅ , Jia-Liang Sun _{3,

6} , Tian-Gui You ₃ , Peng Gao ₇ , Nie-Feng Sun _{4,

8} , Min Liao _{1,

2}

Affiliation

The defect evolution in InP with the 75 keV H⁺ and 115 keV He⁺ implantation at room temperature after subsequent annealing has been investigated in detail. With the same ion implantation fluence, the He⁺ implantation caused much broader damage distribution accompanied by much higher out-of-plane strain with respect to the H⁺ implanted InP. After annealing, the H⁺ implanted InP did not show any blistering or exfoliation on the surface even at the high fluence and the H₂ molecules were stored in the heterogeneously oriented platelet defects. However, the He molecules were stored into the large bubbles which relaxed toward the free surface, creating blisters at the high fluence.

更新日期：2021-08-27

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