Over the last 20 years, technologies for manufacturing rare-earth barium copper oxide (REBCO)-coated conductors have undergone a steady development. Currently, the properties of these conductors are reasonably stable owing to the intensive efforts of the manufacturers. However, for high-field magnet applications, such as the magnets used in nuclear magnetic resonance instruments, accelerators, and fusion reactors, further enhancements in the current-carrying capabilities and/or the current densities of the conductors under a high magnetic field are necessary. Recently, several conductors doped with artificial pinning centers (APCs) have become commercially available, primarily from four manufacturers: Fujikura, Shanghai ST, SuperOx, and SuperPower. In this study, we characterized these relatively new conductors from the viewpoint of a magnet designer. We measured the critical currents (I _c) of full-size 4 mm wide conductors in a wide field range at 4.2 K and 77 K; we also measured the critical temperatures. The measurement results showed that the I _c values at 4.2 K under perpendicular fields for these conductors are significantly greater than those of non-APC conductors; for the 4 mm wide conductors, the I _c values are in the range of 300–740 A and 450–1000 A at 18 T and 12 T, respectively. Furthermore, we clarified that the non-Cu current density (J _c) at 4.2 K for some of the investigated conductors is more than twice the J _c of the recent Nb₃Sn conductors in fields exceeding 15 T. In the investigated commercial REBCO-APC conductors, the highest layer J _c of ∼60 kA mm⁻² (at 18 T and 4.2 K) was noted. We also investigated the I _c–B relationship at 4.2 K for the recent REBCO-APC conductors.

在过去的 20 年里，制造稀土钡铜氧化物 (REBCO) 涂层导体的技术经历了稳步发展。目前，由于制造商的努力，这些导体的性能相当稳定。然而，对于高场磁体应用，如核磁共振仪器、加速器和聚变反应堆中使用的磁体，需要进一步提高高磁场下导体的载流能力和/或电流密度。 . 最近，几种掺杂了人工钉扎中心 (APC) 的导体已经商业化，主要来自四家制造商：藤仓、上海 ST、SuperOx 和 SuperPower。在这项研究中，我们从磁铁设计师的角度对这些相对较新的导体进行了表征。我们测量了临界电流（I _c ) 全尺寸 4 mm 宽导体，在 4.2 K 和 77 K 的宽场范围内；我们还测量了临界温度。测量结果表明，这些导体在垂直场下4.2 K时的I _c值明显大于非APC导体；对于 4 mm 宽的导体，I _c值在 18 T 和 12 T 时分别在 300-740 A 和 450-1000 A 的范围内。此外，我们澄清了一些研究的导体在 4.2 K 时的非铜电流密度 ( J _c ) 是最近的 Nb ₃的J _c的两倍多超过 15 T 场中的 Sn 导体。在研究的商用 REBCO-APC 导体中，注意到最高层J _c为~60 kA mm ^-2（在 18 T 和 4.2 K）。我们还研究了最近的 REBCO-APC 导体在 4.2 K 时的I _c - B关系。