In this paper, a high-speed, low-power and compact silicon-organic hybrid (SOH) modulator operating at the telecom wavelength is presented. The modulator is based on the mature and widespread silicon-on-insulator technology with a device layer of 220 nm. The proposed design utilizes a slot waveguide in a loop-terminated Mach–Zehnder interferometer (LT-MZI) configuration. The LT-MZI is twice as compact as the conventional MZI. Accordingly, the LT-MZI modulator exhibits a reduction in capacitance by a factor of two, which subsequently enhances the modulator speed and power consumption by a factor of two. An electro-optic polymer is used as it exhibits fast and strong electro-optic effects. Finite element and finite difference simulations show that for a driving voltage of only 0.5 V our modulator arms’ length is as low as 167 m resulting in a V_π L product of only 0.084 V mm, 10.41 fF capacitance and up to 100 GHz speed with corresponding energy consumption of only 6.755 fJ bit⁻¹. Results based on 3D finite difference time domain simulation show that our modulator can work over a large optical bandwidth of 60 nm with an extinction ratio (ER) greater than 23 dB and insertion loss (IL) less than 1.7 dB, reaching ER = 40 dB and IL = 1.15 dB at λ = 1.55 m.

在本文中，提出了一种在电信波长下运行的高速、低功耗和紧凑的硅有机混合 (SOH) 调制器。该调制器基于成熟且广泛使用的绝缘体上硅技术，具有 220 nm 的器件层。所提出的设计在环路终止的马赫-曾德干涉仪 (LT-MZI) 配置中使用了槽形波导。LT-MZI 的体积是传统 MZI 的两倍。因此，LT-MZI 调制器的电容减少了两倍，随后将调制器速度和功耗提高了两倍。使用电光聚合物，因为它表现出快速和强大的电光效应。有限元和有限差分仿真表明，对于仅为 0.5 V 的驱动电压，我们的调制器臂长度低至 167m 导致V _π L乘积仅为 0.084 V mm、10.41 fF 电容和高达 100 GHz 的速度，相应的能耗仅为 6.755 fJ 位^-1。基于 3D 有限差分时域仿真的结果表明，我们的调制器可以在 60 nm 的大光带宽上工作，消光比 (ER) 大于 23 dB，插入损耗 (IL) 小于 1.7 dB，达到 ER = 40 dB并且 IL = 1.15 dB，λ = 1.55米。