This letter reports an impact of SiN film stress on electroluminescence (EL) of AlGaN/GaN HEMTs. The EL color of HEMTs turned from high-intensity white to low-intensity red, as the SiN film stress was increased from −24.2 (compressive) to +11.5MPa (tensile). The weak reddish EL from the HEMT with a film stress of +11.5MPa turned bright whitish when a drain-to-source voltage (V _ds) was increased. A transient I _d response after biasing stress revealed that severe current collapse emerged in the HEMT with a film stress of −24.2MPa. In addition, the current collapse in HEMTs increased with the increased V _ds.

这封信报告了 SiN 薄膜应力对 AlGaN/GaN HEMT 的电致发光 (EL) 的影响。随着 SiN 薄膜应力从 -24.2（压缩）增加到 +11.5MPa（拉伸），HEMT 的 EL 颜色从高强度白色变为低强度红色。当漏源电压（V _ds）增加时，来自具有+11.5MPa 薄膜应力的 HEMT 的微红色 EL 变成亮白色。偏置应力后的瞬态I _d响应表明 HEMT 中出现了严重的电流崩溃，薄膜应力为 -24.2MPa。此外，HEMT 中的电流崩溃随着V _{ds 的}增加而增加。