The full InGaN structure was grown on two different InGaNOS substrates from Soitec. An electron blocking layer was inserted in the full InGaN light emitting diode (LED). Enhanced internal quantum efficiency of red emitting InGaN/InGaN quantum wells was measured with a value above 10% at 640nm. 10μm diameter circular micro-LEDs are emitted at 625nm with an external quantum efficiency of 0.14% at 8Acm⁻² with an estimated light extraction efficiency below 4%. With a a lattice parameter of 3.210, InGaN based red LED can also emit up to 650nm.

中文翻译：

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在松弛伪衬底上进行全 InGaN 红色 (625 nm) micro-LED (10 μm) 演示

完整的 InGaN 结构是在 Soitec 的两个不同 InGaNOS 衬底上生长的。在全 InGaN 发光二极管 (LED) 中插入电子阻挡层。发射红光的 InGaN/InGaN 量子阱的增强内量子效率在 640nm 处测量值高于 10%。直径为10 μm 的圆形微型 LED 在 625nm 处发射，在 8Acm ^-2处的外部量子效率为 0.14%，估计光提取效率低于 4%。有一个的3.210晶格参数的InGaN基于红色LED也能发射高达至650nm。