Using the transfer matrix (TM) method, the propagation of electrons is studied, in a one-dimensional multi-quantum well composed of alternating layers of barriers and wells. In the first time, we proposed system with a single barrier CdMnTe is embedded between two semi-infinite substrates. Hence, the corresponding Eigen modes energies were found to be shifted towards lower energies as the barrier thickness increases. The resulting Eigen modes are characterized by a high transmission rates but a very low quality factor values, which highlight the importance of the system periodicity. On the other hand, in order to create localized states in the band gaps, a defective system is exanimated. Indeed, a defect barrier is inserted in a perfect multi-quantum wells (MQWs) system, basically made of repeated CdMnTe barriers and CdTe wells. This defective system can create multi defect modes in the electronic band gaps. The analysis of the transmittance spectra of the defect states evidences a shift to lower energies by increasing the defect thickness with fixed parameters of the system. These defect states move toward higher energy regions, when the concentration of defect increases. In addition, the energy of the defect states varying from 600 meV to 785 meV. We found one defect state for a defect concentration equal to 0.7, when the defect thickness is equal to 5 A. Otherwise, for a defect concentration equal to 0.1, with a defect thickness of 150 A, we found two defect states appeared inside the gaps. While, three defect states were found for a concentration interval between 0.3 and 0.5 and a defect thickness equal respectively to 127 A and 145 A. These defect states have higher quality factors reaching 7630000. Moreover, it shown that the number of gaps modes depends on the defect concentration’s and thickness’ parameters. High quality factors are reached, and an electron multi-channel filtering system is then proposed.

使用转移矩阵 (TM) 方法，在由势垒和阱的交替层组成的一维多量子阱中研究电子的传播。我们首次提出了将单个势垒 CdMnTe 嵌入两个半无限衬底之间的系统。因此，发现相应的本征模式能量随着势垒厚度的增加而向较低能量移动。由此产生的本征模式的特点是传输速率高，但品质因数值非常低，这突出了系统周期性的重要性。另一方面，为了在带隙中创建局部状态，需要检查有缺陷的系统。事实上，缺陷势垒被插入到一个完美的多量子阱 (MQW) 系统中，该系统基本上由重复的 CdMnTe 势垒和 CdTe 阱组成。这种有缺陷的系统会在电子带隙中产生多种缺陷模式。对缺陷状态的透射光谱的分析证明，通过在系统的固定参数下增加缺陷厚度，向较低能量的转变。当缺陷浓度增加时，这些缺陷态向更高能量区域移动。此外，缺陷态的能量从 600 meV 到 785 meV 不等。当缺陷厚度等于 5 A 时，我们发现缺陷浓度等于 0.7 的一个缺陷态。否则，当缺陷浓度等于 0.1 时，缺陷厚度为 150 A，我们发现间隙内出现了两个缺陷态. 同时，在 0.3 和 0.5 之间的浓度间隔和分别等于 127 A 和 145 A 的缺陷厚度下发现了三种缺陷状态。这些缺陷状态具有更高的质量因子，达到 7630000。此外，它表明间隙模式的数量取决于缺陷浓度和厚度参数。达到了高质量因子，然后提出了一种电子多通道滤波系统。