A mechanism of effect of optical excitation on resistive switching of dielectric films with embedded metal nanoparticles (MNPs) has been proposed. The mechanism is related to a charging of the MNPs due to internal photoemission of electrons from the MNPs, which results in an increasing of the electric field strength at the MNP surfaces that, in turn, promotes the rupture and restoring of the conductive filaments in the dielectric film. The increasing of the electric filed strength due to the MNP charging as a function of the MNP sizes and positions inside the dielectric films was evaluated using a simple model taking into account the mirror charges on the conductive electrodes of a memristor stack. The single electron charging was found to be essential at small MNP radii (∼1 nm). The proposed mechanism was confirmed experimentally by studying the photoexcitation-induced charging of Au MNPs (with average radius 1.6–1.8 nm) embedded into a 10 nm thick ZrO₂(Y) film by Kelvin probe force microscopy.

已经提出了一种光激发对具有嵌入金属纳米粒子 (MNP) 的介电膜的电阻转换的影响机制。该机制与 MNP 的内部光电发射电子导致 MNP 的充电有关，这导致 MNP 表面的电场强度增加，进而促进了 MNP 中导电丝的断裂和恢复。介电薄膜。考虑到忆阻器堆栈的导电电极上的镜面电荷，使用简单模型评估由于 MNP 充电而导致的电场强度增加与 MNP 尺寸和介电膜内部位置的关系。发现单电子充电在小 MNP 半径（~1 nm）下是必不可少的。₂ (Y) 薄膜，开尔文探针力显微镜。