In this work, the electrical and spin properties of monolayer MoSi₂ X ₄ (X = N, P, As, and Sb) under vertical strain are investigated. The band structures show that MoSi₂N₄ is an indirect semiconductor, whereas other compounds are direct semiconductors. The vertical strain has been selected to modify the electrical properties. The bandgap shows a maximum and decreases for both tensile and compressive strains. The valence band at K-point displays a large spin-splitting, whereas the conduction band has a negligible splitting. On the other hand, the second conduction band has a large spin-splitting and moves down under vertical strain which leads to a large spin-splitting in both conduction and valence bands edges. The projected density of states along with the projected band structure clarifies the origin of these large spin-splittings. These three spin-splittings can be controlled by vertical strain.

在这项工作中，研究了垂直应变下单层 MoSi ₂ X ₄ ( X = N、P、As 和 Sb)的电学和自旋特性。能带结构表明 MoSi ₂ N ₄是间接半导体，而其他化合物是直接半导体。已选择垂直应变来修改电气特性。带隙对于拉伸应变和压缩应变均显示出最大值和减小。K 点的价带显示出较大的自旋分裂，而导带的分裂可以忽略不计。另一方面，第二导带具有大的自旋分裂并在垂直应变下向下移动，这导致导带和价带边缘的自旋分裂。投影态密度以及投影带结构阐明了这些大自旋分裂的起源。这三种自旋分裂可以通过垂直应变来控制。