When nonflat Al _x Ga_1−x N quantum wells (QWs) for producing 285 nm light emitting diodes (LEDs) were fabricated on n-AlGaN on AlN templates with dense macrosteps on c(0001) sapphire substrates with a 1.0 miscut relative to the m[1–100] axis, composite electroluminescence (EL) spectra from both inclined and terrace zones in Al _x Ga_1−x N QWs (x∼ 1/3) were generated owing to compositional and thickness modulations. The shoulder or main peaks in composite EL spectra tended to locate at fixed discrete wavelengths of ∼287, ∼292, and ∼296 nm from 12 nonuniform 285 nm LED wafers that were involved in nonnegligible run-to-run drift, even though these wafers were fabricated using the same source gas flow parameters for metal-organic vapor phase epitaxy. The discrete wavelengths of ∼287, ∼292, and ∼296 nm were attributed to EL from Al_1/3Ga_2/3N QWs with thicknesses of 8, 9, and 10 monolayers (ML), respectively, by referring to the results of cathodoluminescence (CL) analysis. Also, when nonflat Al _x Ga_1−x N QWs (x∼ 1/2) for 265 nm LEDs were grown, single-peak-like EL spectra were mainly generated from the inclined zones in nonflat QWs. The EL spectra taken from four nonuniform 265 nm LED wafers tended to show weak structures or main peaks at ∼257, ∼261, ∼266, and ∼271 nm, which were also attributed to emissions from Al_1/2Ga_1/2N QWs with thicknesses of 5, 6, 7, and 8 ML, respectively, by referring to CL analysis results. The creation of Al_1/3Ga_2/3N and Al_1/2Ga_1/2N in nonflat QWs in this work was in agreement with the results of our previous studies that indicated the creation of metastable Al _{n /12}Ga_1−n/12N (n: consecutive natural numbers). Furthermore, QW thicknesses of consecutive n ML may imply that Al_1/3Ga_2/3N and Al_1/2Ga_1/2N have 1 ML configurations of Al and Ga atoms on a c(0001) plane.

当用于生产 285 nm 发光二极管 (LED) 的非平坦 Al _x Ga _{1- x} N 量子阱 (QW) 在 AlN 模板上的 n-AlGaN 上制造时，在c (0001) 蓝宝石衬底上具有 1.0 错切相对于m [1–100] 轴，Al _x Ga _{1− x} N QWs ( x ∼ 1/3) 是由于成分和厚度调制而产生的。复合 EL 光谱中的肩峰或主峰往往位于 287、292 和 296 nm 的固定离散波长处，来自 12 个不均匀的 285 nm LED 晶片，这些晶片涉及不可忽略的运行间漂移，即使这些晶片使用相同的源气流参数制造金属有机气相外延。通过参考结果，~287、~292 和~296 nm 的离散波长归因于厚度分别为 8、9 和 10 个单层 (ML) 的Al _1/3 Ga _2/3 N QW 的EL阴极发光 (CL) 分析。此外，当非平坦的 Al _x Ga _{1− x} N QWs ( x ∼ 1/2) 对于 265 nm LED 的生长，单峰状 EL 光谱主要由非平坦 QW 的倾斜区域产生。取自四个非均匀 265 nm LED 晶片的 EL 光谱倾向于在~257、~261、~266 和~271 nm 处显示弱结构或主峰，这也归因于来自 Al _1/2 Ga _1/2 N 的发射参考 CL 分析结果，QWs 的厚度分别为 5、6、7 和 8 ML。在这项工作中在非平坦 QW 中产生 Al _1/3 Ga _2/3 N 和 Al _1/2 Ga _1/2 N 与我们之前的研究结果一致，表明产生了亚稳态 Al _{n /12} Ga _{1 − n /12} N（n：连续的自然数）。此外，连续n ML 的QW厚度可能意味着Al _1/3 Ga _2/3 N和Al _1/2 Ga _1/2 N在c（0001）平面上具有Al和Ga原子的1 ML配置。