In this paper, capacitance and conductance characteristics are used to explain reliability issues in metal-oxide-semiconductor capacitors (MOSCAPs) with a silicon-germanium (SiGe) channel. The SiGe channel devices are also comprehensively compared to traditional Si channel devices. After negative bias temperature stress, both exhibit flat-band voltage (V _FB) shifts in the negative direction and a rise in the conductance hump. Generally, the process of Si devices is more stable than SiGe devices, resulting in the interface quality of Si MOSCAPs being better due to lattice constant matching at the interface. However, it is noteworthy that the degradation of Si MOSCAPs is more serious than that of Side MOSCAPs. Therefore, this study quantitatively extracts the interface defects and illustrates the generation of interface defects with a reaction-diffusion model. In addition, the difference in the injected energy level is used to explain the difference in the V_FB shift.

在本文中，电容和电导特性用于解释具有硅锗 (SiGe) 通道的金属氧化物半导体电容器 (MOSCAP) 的可靠性问题。SiGe 沟道器件也与传统的 Si 沟道器件进行了全面比较。在负偏置温度应力后，两者都表现出平带电压（V _FB) 向负方向移动，电导峰上升。通常，Si器件的工艺比SiGe器件更稳定，由于界面处的晶格常数匹配，导致Si MOSCAP的界面质量更好。然而，值得注意的是，Si MOSCAPs的退化比Side MOSCAPs的退化更严重。因此，本研究定量提取界面缺陷，并用反应扩散模型说明界面缺陷的产生。此外，注入能级的差异用于解释V _FB偏移的差异。