The capability of single crystal diamonds to maintain their unique electronic properties even at high temperatures is, in particular, relevant for its applications as a radiation detector. In order to explore characteristics of charge transport at high temperatures (up to 450 ^∘C), diamond was exposed to MeV energy ions, both, to induce radiation damage and to probe subsequent influence on detector’s properties. Dependence of mobility-lifetime product with temperature has been obtained for electrons and holes. For holes, mu-tau displays a linear degradation with rising temperature, while for electrons, change with temperature is less evident. Furthermore, deep trapping levels induced in the material by radiation damage, were studied through time-resolved charge signals. Detrapping time was extracted from this data. Hole trap level, with the activation energy of 0.53 0.01 eV has been detected in the regions of the diamond detector previously irradiated by 5 MeV damaging proton beam, but not in the pristine regions. This indicates that the trap was formed due to defect induction during radiation damage exposure. Activation of this deep level is important for charge transport performance in diamond detectors operating at high temperatures and high radiation conditions.

单晶金刚石即使在高温下也能保持其独特的电子特性，这与其作为辐射探测器的应用尤其相关。为了探索在高温（高达 450 ^∘C)，金刚石暴露于 MeV 能量离子，以诱发辐射损伤和探测对探测器特性的后续影响。已经获得了电子和空穴的迁移率寿命乘积与温度的相关性。对于空穴，mu-tau 显示出随温度升高的线性退化，而对于电子，随温度的变化不太明显。此外，通过时间分辨电荷信号研究了由辐射损伤在材料中引起的深度俘获水平。从该数据中提取脱附时间。在金刚石探测器先前被 5 MeV 破坏性质子束照射的区域中检测到空穴陷阱能级，其活化能为 0.53 0.01 eV，但未在原始区域中检测到。这表明陷阱是由于辐射损伤暴露期间的缺陷诱导而形成的。