The non-volatile logic gates that can perform both storage and computing functions are the elementary components for in-memory computing. In this work, we propose a spin–orbit torque based non-volatile reconfigurable logic device. The spatial-dependent spin current generated by a Y-shaped heavy metal layer is utilized to break the symmetry of a perpendicular magnetic tunnel junction (MTJ) with Dzyaloshinskii–Moriya interaction, which leads to a symmetry-dependent magnetization switching. Both bipolar and unipolar magnetization switching can be achieved based on the proposed scheme. The feasibility of the prototype device is demonstrated through the micromagnetic simulations. Moreover, we assign these symmetry-dependent switching characteristics with different Boolean logic operations. Three logic gates including Majority, XOR, and AND/XOR are reconfigured. Furthermore, we offer a different approach to perform an N-bit full subtractor/adder function using a single MTJ. The proposed device paves the way toward a programmable and highly parallel logic-in-memory architecture in the near future.

可以执行存储和计算功能的非易失性逻辑门是内存计算的基本组件。在这项工作中，我们提出了一种基于自旋轨道扭矩的非易失性可重构逻辑器件。由 Y 形重金属层产生的空间相关自旋电流用于破坏具有 Dzyaloshinskii-Moriya 相互作用的垂直磁隧道结 (MTJ) 的对称性，从而导致对称性相关磁化转换。基于所提出的方案，可以实现双极和单极磁化切换。通过微磁模拟证明了原型装置的可行性。此外，我们用不同的布尔逻辑运算分配这些对称相关的开关特性。三个逻辑门，包括多数、异或、和 AND/XOR 被重新配置。此外，我们提供了一种不同的方法来执行使用单个 MTJ 的N位全减法器/加法器功能。所提出的设备为在不久的将来实现可编程和高度并行的内存逻辑架构铺平了道路。