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Observation of antiferromagnetic ordering from muon spin resonance study and the Kondo effect in a Dy-doped Bi2Se3 topological insulator
Journal of Physics D: Applied Physics ( IF 3.1 ) Pub Date : 2021-08-24 , DOI: 10.1088/1361-6463/ac128f
Vinod K Gangwar 1 , Shiv Kumar 2 , Mahima Singh 1 , Prajyoti Singh 1 , Labanya Ghosh 1 , Debarati Pal 1 , Prashant Shahi 3 , Yoshiya Uwatoko 4 , Eike F Schwier 2 , K Shimada 2 , Durgesh Kumar Sharma 5 , Sudhir Kumar 5 , Sandip Chatterjee 1
Affiliation  

The transport and magnetic properties as well as the microscopic electronic properties of the Dy-doped topological insulator Bi2Se3 (Bi1.9Dy0.1Se3) are examined in detail. It is demonstrated that Dy doping induces antiferromagnetic (AFM) ordering in Bi2Se3. It is also observed that Dy doping opens a surface band gap of ∼52 meV at 6.5 K. The transition from AFM to ferromagnetic occurs at a lower temperature, ∼5 K in a magnetic field of ∼3 T. Furthermore, Dy doping in Bi2Se3 leads to the Kondo effect and weak localization to weak anti-localization crossover. Muon spin resonance measurements indicate that the signal measured with magnetization reflects the magnetic properties of 2% of the sample. The experimental findings are supported by theoretical calculations based on density functional theory.



中文翻译:

从 μ 子自旋共振研究和 Dy 掺杂的 Bi2Se3 拓扑绝缘体中的 Kondo 效应观察反铁磁排序

详细检查了 Dy 掺杂拓扑绝缘体 Bi 2 Se 3 (Bi 1.9 Dy 0.1 Se 3 )的传输和磁性以及微观电子特性。结果表明,Dy 掺杂会在 Bi 2 Se 3 中诱导反铁磁 (AFM) 排序。还观察到,Dy 掺杂在 6.5 K 时打开了约 52 meV 的表面带隙。从 AFM 到铁磁的转变发生在较低的温度下,在约 3 T 的磁场中约 5 K。此外,Bi 中的 Dy 掺杂23导致近藤效应和弱定位到弱反定位交叉。介子自旋共振测量表明,用磁化测量的信号反映了样品 2% 的磁性。实验结果得到了基于密度泛函理论的理论计算的支持。

更新日期:2021-08-24
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