The transport and magnetic properties as well as the microscopic electronic properties of the Dy-doped topological insulator Bi₂Se₃ (Bi_1.9Dy_0.1Se₃) are examined in detail. It is demonstrated that Dy doping induces antiferromagnetic (AFM) ordering in Bi₂Se₃. It is also observed that Dy doping opens a surface band gap of ∼52 meV at 6.5 K. The transition from AFM to ferromagnetic occurs at a lower temperature, ∼5 K in a magnetic field of ∼3 T. Furthermore, Dy doping in Bi₂Se₃ leads to the Kondo effect and weak localization to weak anti-localization crossover. Muon spin resonance measurements indicate that the signal measured with magnetization reflects the magnetic properties of 2% of the sample. The experimental findings are supported by theoretical calculations based on density functional theory.

详细检查了 Dy 掺杂拓扑绝缘体 Bi ₂ Se ₃ (Bi _1.9 Dy _0.1 Se ₃ )的传输和磁性以及微观电子特性。结果表明，Dy 掺杂会在 Bi ₂ Se _{3 中}诱导反铁磁 (AFM) 排序。还观察到，Dy 掺杂在 6.5 K 时打开了约 52 meV 的表面带隙。从 AFM 到铁磁的转变发生在较低的温度下，在约 3 T 的磁场中约 5 K。此外，Bi 中的 Dy 掺杂₂硒₃导致近藤效应和弱定位到弱反定位交叉。介子自旋共振测量表明，用磁化测量的信号反映了样品 2% 的磁性。实验结果得到了基于密度泛函理论的理论计算的支持。