Doping Ti into WO _x is widely used to improve the performance of various WO _x -based devices. However, Ti-doped WO _x (Ti:WO _x ) based memristors have not been investigated in depth, especially regarding their synaptic properties. In this report, Ti:WO _x films are deposited by sputtering WTi alloy target in Ar + O₂ atmosphere, in which the substrates are not heated, avoiding the precipitation of TiO₂ phase. As-grown Ti:WO _x films exhibit polymorphous crystallized structures, originating from the topological deformation of WO₆ octahedron by replacing W with Ti. Furthermore, the memristor with the structure of W/Ti:WO _x / indium-doped tin oxide demonstrates typical synaptic properties, including the controllable synapse weight update by adjusting the input pulse amplitude, interval, as well as the transformation from the paired-pulse facilitation to the paired-pulse depression. Moreover, the higher Ti–O band energy leads to smaller hysteresis loop areas of its current–voltage (I–V) curves, which may mean better synaptic performances, such as higher resolution. Additionally, contrary to other metal-oxide based memristors, our device conductance increases by applying positive voltage scans or a series of positive pulses on the metal electrode. Otherwise, it will decrease. With I–V fitting and the energy-band diagrams, we analyzed deep carrier transport processes, revealing a unique synaptic mechanism.

将Ti掺杂到WO _{x 中}被广泛用于提高各种基于WO _x的器件的性能。然而，尚未深入研究基于Ti 掺杂的 WO _x (Ti:WO _x ) 的忆阻器，特别是关于它们的突触特性。在本报告中，Ti:WO _x薄膜是通过在 Ar + O ₂气氛中溅射 WTi 合金靶材来沉积的，其中基板不加热，避免了 TiO ₂相的沉淀。由于WO ₆的拓扑变形，生长的 Ti:WO _x薄膜表现出多形结晶结构 八面体用 Ti 代替 W。此外，具有 W/Ti:WO _x / 掺铟氧化锡结构的忆阻器表现出典型的突触特性，包括通过调整输入脉冲幅度、间隔以及成对脉冲的转换来控制突触权重更新促进配对脉冲抑郁症。此外，更高的 Ti-O 带能量导致其电流-电压 ( I - V ) 曲线的磁滞回线区域更小，这可能意味着更好的突触性能，例如更高的分辨率。此外，与其他基于金属氧化物的忆阻器相反，我们的器件电导通过在金属电极上施加正电压扫描或一系列正脉冲来增加。否则会减少。和 I - V拟合和能带图，我们分析了深层载流子传输过程，揭示了一种独特的突触机制。