This work investigates the intrinsic degradation mechanism of InGaN/GaN UVA (320–400 nm) light emitting diodes (LEDs) after swift heavy ion irradiation from the defect aspect using temperature-dependent low frequency noise measurement. The UVA LEDs were exposed to 1423 MeV Ta ions with a fluence of 10⁸–10¹⁰ ions cm⁻². The optical power decreases and the leakage current increases evidently after irradiation. The defect behaviors were characterized to analyze the degradation mechanism. It is indicated that the ∼0.2 eV energy level defect decreases, and the defect with an energy level of about 0.65 eV increases with the increasing fluence, resulting in device degradation. Combining the defect energy level and the decreased yellow luminescence in the photoluminescence spectrum, the possible defect transform process is the newly created N interstitial atoms fill in the intrinsic V_Ga and form N_Ga after irradiation.

这项工作使用温度相关的低频噪声测量从缺陷方面研究了 InGaN/GaN UVA (320–400 nm) 发光二极管 (LED) 在快速重离子照射后的内在降解机制。UVA LED 暴露于 1423 MeV Ta 离子，通量为 10 ⁸ –10 ¹⁰离子 cm ^-2. 辐照后光功率降低，漏电流明显增加。表征缺陷行为以分析退化机制。表明~0.2 eV能级缺陷减少，0.65 eV能级缺陷随着注量的增加而增加，导致器件退化。结合缺陷能级和光致发光光谱中减少的黄色发光，可能的缺陷转化过程是新产生的 N 间隙原子填充本征 V _Ga并在照射后形成 N _Ga。