We fabricated and characterized metal insulator semiconductor (MIS) structures by applying amorphous AlN thin layers as a dielectric in gate recessed AlGaN/GaN heterostructure field effect transistors (HFETs). Micro photoluminescence measurements performed on MISHFET devices reveal a local non-uniform distribution of strain in the source—gate recess—drain region. Furthermore, a reduction of compressive stress up to 0.3 GPa in GaN after gate recessing was experimentally determined. The local stress increases by ∼0.1 GPa and ∼0.2 GPa after the deposition of 4 and 6 nm thin AlN layers in the gate recessed structures, respectively. Additionally, an increase in sheet charge density in the devices under investigation from ∼ to ∼ was evaluated by capacitance–voltage measurements. Therefore, strain engineering by applying amorphous AlN layers in gate recessed MISHFETs can significantly improve their device characteristics.

我们通过在栅极凹入式 AlGaN/GaN 异质结构场效应晶体管 (HFET) 中应用非晶 AlN 薄层作为电介质来制造和表征金属绝缘体半导体 (MIS) 结构。在 MISHFET 器件上进行的微光致发光测量揭示了源极-栅极凹槽-漏极区域中应变的局部非均匀分布。此外，通过实验确定了栅极凹陷后 GaN 中压应力的降低高达 0.3 GPa。在栅极凹陷结构中分别沉积 4 和 6 nm 的薄 AlN 层后，局部应力分别增加了 ~0.1 GPa 和 ~0.2 GPa。此外，所研究器件中的片电荷密度从 ~增加到 ~通过电容-电压测量进行评估。因此，通过在栅极凹陷 MISHFET 中应用非晶 AlN 层进行应变工程可以显着改善其器件特性。