In the present study, pure and zinc (Zn) doped tin oxide (SnO₂) thin films were grown by successive ionic layer adsorption and reaction method on the soda lime glass slides at 293 K. The prepared samples were examined to observe the impact of Zn doping on structural, morphological, electrical, and optical properties of SnO₂ crystal lattice. The x-ray diffractometer (XRD), ultraviolet–visible spectrometer, energy dispersive x-ray analysis (EDAX), scanning electron microscope (SEM), Raman, x-ray photoelectron spectroscopy (XPS), and photoluminescence (PL) spectra measurements were conducted. And, two probe detection method was applied to find the shift in resistance values corresponding to varying temperatures. The XRD results depicted that the prepared thin films have the tetragonal rutile structure. The surface morphologies were observed to be affected by the changing concentrations of Zn doping. The EDAX evaluation exposed the existence of Zn ions in the prepared samples in addition to Sn and O. Resistivity vs temperature (r–t) measurements exhibited that all the samples possess the common ‘r–t’ characteristics of semiconductors. The XPS results uncovered the fact that the binding energy of SnO₂ nanostructures was decreased by 0.9 eV due to the existence of Zn ions. It was also found out that the band gaps, calculated by using the absorption measurements, can be tuned from 2.02 eV to 2.50 eV by the different rates of Zn dopants in the SnO₂ nanostructures. The Raman spectras of pure SnO₂ and Zn doped SnO₂ (Zn:SnO₂) samples gave three peaks that were in the range of 490 cm⁻¹, 580 cm⁻¹ and 620 cm⁻¹ for each peak separately. The PL spectra displayed that the emission intensity decreased with the introduction of impurities into the SnO₂ lattice.

在本研究中，通过连续离子层吸附和反应方法在 293 K 的钠钙玻璃载玻片上生长纯和锌 (Zn) 掺杂的氧化锡 (SnO ₂ ) 薄膜。检查制备的样品以观察其影响Zn 掺杂对 SnO _{2 的}结构、形态、电学和光学性质的影响水晶格子。X 射线衍射仪 (XRD)、紫外-可见光谱仪、能量色散 X 射线分析 (EDAX)、扫描电子显微镜 (SEM)、拉曼、X 射线光电子能谱 (XPS) 和光致发光 (PL) 光谱测量分别为实施。并且，应用两种探针检测方法来发现对应于不同温度的电阻值的变化。XRD 结果表明制备的薄膜具有四方金红石结构。观察到表面形态受 Zn 掺杂浓度变化的影响。EDAX 评估表明，除了 Sn 和 O 之外，制备的样品中还存在 Zn 离子。电阻率与温度 ( r – t ) 的测量结果表明，所有样品都具有共同的 'r – t ' 半导体的特性。XPS 结果揭示了由于 Zn 离子的存在，SnO ₂纳米结构的结合能降低了 0.9 eV。还发现通过使用吸收测量计算的带隙可以通过 SnO ₂纳米结构中不同比例的 Zn 掺杂剂从 2.02 eV 调整到 2.50 eV 。纯 SnO ₂和 Zn 掺杂的 SnO ₂ (Zn:SnO ₂ ) 样品的拉曼光谱给出了在 490 cm ^-1、580 cm ^-1和 620 cm ^-1范围内的三个峰分别为每个峰。PL 光谱显示发射强度随着杂质引入SnO ₂晶格而降低。