We fabricated a Ni/SiO₂/Pt resistive random-access memory device referred to as a memristor, which demonstrates both volatile and non-volatile switching. A reversible transition between volatile and non-volatile switching is achieved by applying different current compliances (CCs). Volatile switching was observed when the CC is 50 nA, whereas volatile switching changed to non-volatile switching when the CC is 100 nA. The switching mechanism model can be explained by the formation and rupture of conducting filaments by electrochemical metallization effects, which are vital in resistive switching. We demonstrate a simple pulse measurement method for both switching behaviors. In a single Ni/SiO₂/Pt memristor device, short-term memory for volatile switching and a long-term memory synaptic function for non-volatile switching is observed under repeated stimuli. Owing to the distinctive characteristics of the Ni/SiO₂/Pt device, the short-term synaptic function, i.e. paired-pulse facilitation and depression for volatile switching, is successfully mimicked by the memristor. These electrical results indicate that the Ni/SiO₂/Pt memristor device with synaptic behavior has potential for use in brain-inspired computing systems.

我们制造了一种称为忆阻器的 Ni/SiO ₂ /Pt 电阻式随机存取存储器件，它展示了易失性和非易失性切换。通过应用不同的电流顺应性 (CC)，可实现易失性和非易失性切换之间的可逆转换。当 CC 为 50 nA 时观察到易失性开关，而当 CC 为 100 nA 时易失性开关变为非易失性开关。开关机制模型可以通过电化学金属化效应导致导电丝的形成和破裂来解释，这在电阻开关中至关重要。我们展示了两种开关行为的简单脉冲测量方法。在单个 Ni/SiO ₂在重复刺激下观察到 /Pt 忆阻器器件、易失性开关的短期记忆和非易失性开关的长期记忆突触功能。由于Ni/SiO ₂ /Pt 器件的独特特性，忆阻器成功地模拟了短期突触功能，即用于易失性开关的成对脉冲促进和抑制。这些电学结果表明，具有突触行为的 Ni/SiO ₂ /Pt 忆阻器器件具有用于类脑计算系统的潜力。