The read/write performance and yield of a negative capacitance field effect transistor (NCFET)-based eight-transistor (8-T) static random access memory (SRAM) are quantitatively evaluated and then compared with a conventional 8-T SRAM. The performance of the 8-T SRAM cell is analyzed by read/write metrics (i.e. read static noise margin, write-ability current and read ‘zero (0)’ current). The sensitivity of the 8-T SRAM cell to the read/write metric is estimated by quantitatively evaluating the impact of systematic variation (i.e. channel width, length and threshold voltage variation). Based on variation-aware sensitivity analysis, quantitative yield estimation is done using the ‘cell sigma’ concept. Finally, the minimum power supply voltage (V _DD) (which satisfies six cell sigma for yield estimation of a NCFET-based/baseline 8-T SRAM cell) is quantitatively estimated.

定量评估基于负电容场效应晶体管 (NCFET) 的八晶体管 (8-T) 静态随机存取存储器 (SRAM) 的读/写性能和良率，然后与传统的 8-T SRAM 进行比较。8-T SRAM 单元的性能通过读/写指标（即读取静态噪声容限、写入能力电流和读取“零 (0)”电流）进行分析。8-T SRAM 单元对读/写度量的敏感性是通过定量评估系统变化（即通道宽度、长度和阈值电压变化）的影响来估计的。基于变异感知敏感性分析，定量产量估计是使用“细胞西格玛”概念完成的。最后，最小电源电压（V _DD)（满足基于 NCFET/基线 8-T SRAM 单元的产量估计的 6 个单元西格玛）被定量估计。