In this paper we have studied AlGaN/GaN high electron mobility transistor devices with three different buffer layer structures and their effect on the RF performance of the devices. Detailed DC and pulsed IV measurements were carried out to investigate the effect of bulk traps on the performance of the devices. Activation energy of buffer traps is also investigated by low frequency S-parameter measurements of the devices at variable temperature. The effect of buffer structure and quality of buffer on RF gain has been observed for the devices. Using the S-parameters, the equivalent circuit model parameters of the devices were also extracted. All the characterizations revealed that the presence of low C-doped buffer shows less vulnerability towards traps and produces better RF performance. It was also observed that the device with only low C-doped thin buffer reproduces better RF characteristics.

在本文中，我们研究了具有三种不同缓冲层结构的 AlGaN/GaN 高电子迁移率晶体管器件及其对器件 RF 性能的影响。进行了详细的 DC 和脉冲 IV 测量以研究体陷阱对器件性能的影响。缓冲阱的活化能也通过器件在可变温度下的低频 S 参数测量来研究。已经观察到缓冲器结构和缓冲器质量对器件射频增益的影响。使用 S 参数，还提取了器件的等效电路模型参数。所有特征表明，低掺碳缓冲器的存在对陷阱的脆弱性更小，并产生更好的射频性能。