The authors report on the fabrication of a pyruvic acid (Pyr)/p-Si heterojunction photodetector and analyses of electro-optical behavior of the device. First, Pyr film was coated on p-Si by spin coating method. The morphology and elemental structure of this film were determined by scanning electron microscopy and energy dispersive x-ray analysis, respectively. In order to analyze the device’s performance, the current–voltage (I–V) measurements were performed in the dark. The device was a rectification ratio of about 10⁵ in the dark, and photodetector device parameters such as responsivity, on/off ratio and specific detectivity were analyzed in light intensity-dependent I–V measurements. Measurements depending on the light intensity were carried out between 15 and 30 mW cm⁻², at 5 mW cm⁻² intervals. The capacitance–voltage (C–V) and conductance–voltage (G–V) measurements carried out in the dark were analyzed at low and high frequencies in addition to the dielectric properties of the Pyr/p-Si heterojunction. Experimental results showed that the Pyr/p-Si device can be effectively applied to optical sensors and imaging devices.

作者报告了丙酮酸 (Pyr)/p-Si 异质结光电探测器的制造以及该器件的光电行为分析。首先，通过旋涂法将Pyr薄膜涂覆在p-Si上。该薄膜的形态和元素结构分别通过扫描电子显微镜和能量色散 X 射线分析确定。为了分析器件的性能，在黑暗中进行了电流-电压 ( I – V ) 测量。该器件在黑暗中的整流比约为 10 ⁵，并在与光强相关的I – V测量。取决于光强度的测量在15和30 mW cm ^-2之间以5 mW cm ^-2间隔进行。除了 Pyr/p-Si 异质结的介电特性外，还在低频和高频下分析了在黑暗中进行的电容-电压 ( C - V ) 和电导-电压 ( G - V ) 测量。实验结果表明，Pyr/p-Si 器件可以有效地应用于光学传感器和成像器件。