The blade bottom electrode contact (BEC) can significantly reduce the programming current of the phase change memory (PCM) and achieve low power consumption compared with the typical T-shaped PCM cell. The method of controlling the electrode width by controlling the thickness of the deposited layer can make the size break through the limit of photolithography. This paper proves that the RESET programming current and power consumption of the PCM decrease linearly with the decrease of the blade BEC width, and builds a theoretical model to verify it by simulating the distribution internal temperature field. Based on the above research, the cell life of PCM with different electrode widths was tested, and it was proved that the endurance of PCM increased with the decrease of the width of the blade electrode, caused by the lower power consumption of the narrower electrode.

与典型的 T 形 PCM 单元相比，刀片底部电极触点 (BEC) 可以显着降低相变存储器 (PCM) 的编程电流并实现低功耗。通过控制沉积层的厚度来控制电极宽度的方法可以使尺寸突破光刻的极限。本文证明了PCM的RESET编程电流和功耗随着叶片BEC宽度的减小而线性减小，并通过模拟分布内部温度场建立理论模型对其进行验证。基于以上研究，对不同电极宽度的PCM电池寿命进行了测试，证明随着刀片电极宽度的减小，PCM的寿命增加，