We have investigated the performance of AlGaInP-based red micro-light-emitting diodes (micro-LEDs) with different n-type contact schemes as functions of current, ambient temperature, and chip size. The samples with AuGe/Ni/Au contact revealed wider full width at half maximum of electroluminescence than that with the Pd/Ge contact. All samples also exhibited broad peaks at wavelengths between ∼632 and ∼640 nm, whose intensity depended on the type of contact schemes and temperature. Regardless of the contact schemes, the 10 μm-size samples showed a larger temperature-dependent reduction in the output power at current density of <50 A cm⁻² than the 100 μm-size ones. Above 100 A cm⁻², however, both samples showed similar temperature dependence. Irrespective of the contact schemes, the main peak of the 100-μm samples was red-shifted, whereas no red-shift was detected in the 10-μm samples. The third peak of the AuGe-based contact samples became more dominant at 700 A cm⁻² than the main peak, whereas that of the PdGe contact samples became more dominant at 1000 A cm⁻². Based on the chip size, current, contact scheme, and temperature dependence, the performance degradation of the red micro-LEDs is described and discussed.

我们研究了具有不同 n 型接触方案的基于 AlGaInP 的红色微型发光二极管 (micro-LED) 的性能，作为电流、环境温度和芯片尺寸的函数。具有 AuGe/Ni/Au 接触的样品显示出比 Pd/Ge 接触更宽的电致发光半峰全宽。所有样品还在~632 和~640 nm 之间的波长处表现出宽峰，其强度取决于接触方案的类型和温度。不管接触方案中，10 μ M-大小样品在<50甲厘米的电流密度显示出的输出功率更大的取决于温度的降低^-2比100 μ米尺寸的。100 A cm ^-2以上然而，两个样品都表现出相似的温度依赖性。不管接触方案中，100-主峰μ m个样本被红移，而10-没有检测到红移μ m个样本。AuGe 基接触样品的第三个峰在 700 A cm ^{-2 处}比主峰更占优势，而 PdGe 接触样品的第三个峰在 1000 A cm ^-2处变得更占优势。基于芯片尺寸、电流、接触方案和温度依赖性，描述和讨论了红色微型 LED 的性能退化。