InGaN light-emitting diodes (LEDs) with InGaN/GaN/InGaN triangular (IGIT) barriers were designed and investigated on a theoretical basis. The carrier concentration and radiative recombination rate distribution in multiple quantum wells, energy band diagrams, light output power–current–voltage performance curves, and internal quantum efficiency of the LEDs with IGIT barriers were studied. The simulations showed that the InGaN LEDs with IGIT barriers have higher output light power, lower turn-on voltage, and less efficiency droop than that of LEDs with conventional GaN and InGaN barriers. These improvements originate from the appropriately designed energy band diagram of the LEDs with IGIT barriers, which improves injection efficiency of holes and confinement of electrons.

在理论基础上设计并研究了具有 InGaN/GaN/InGaN 三角形 (IGIT) 势垒的 InGaN 发光二极管 (LED)。研究了多个量子阱中的载流子浓度和辐射复合率分布、能带图、光输出功率-电流-电压性能曲线以及具有 IGIT 势垒的 LED 的内量子效率。仿真表明，与具有传统 GaN 和 InGaN 势垒的 LED 相比，具有 IGIT 势垒的 InGaN LED 具有更高的输出光功率、更低的开启电压和更小的效率下降。这些改进源于适当设计的带有 IGIT 势垒的 LED 能带图，它提高了空穴的注入效率和电子的限制。