We have investigated the in situ doping of GeSn with Ge₂H₆, SnCl₄, B₂H₆ (p-type) or PH₃ (n-type) at 349 C, 100 Torr on Ge Strain-relaxed Buffers, themselves on Si(001) substrates. Our aim was to replace the boron and phosphorous doped Ge layers used in previous pin structures with GeSn:B and GeSn:P. The Sn content from Wavelength Dispersive X-ray Fluorescence (WDXRF) was constant around 6.5% for low F(B₂H₆)/F(Ge₂H₆) and F(PH₃)/2*F(Ge₂H₆) Mass-Flow Ratios (MFRs). It fell down to 4.9% (GeSn:B) and 6.0% (GeSn:P) for higher MFRs due to the dopant precursors that catalyzed the Ge Growth Rate component. The B atomic concentrations (from Secondary Ion Mass Spectrometry (SIMS)) increased almost linearly with the MFR, reaching values of at most 6.3 10¹⁹ cm⁻³. B atoms were almost fully electrically active based on Electrochemical Capacitance Voltage (ECV) measurements. WDXRF and SIMS also gave us access to the atomic P concentrations, with values as high as 3.9 10²⁰ cm⁻³. Maybe because of the formation of Sn_mP_nV nanoclusters, the P electrical activation decreased for the highest flows. Only the GeSn:B layers grown at the three highest MFRs exhibited some B and/or Sn surface segregation. Otherwise, a smooth surface with a cross hatch along 〈110〉 was present.

我们已经研究了 GeSn 与 Ge ₂ H ₆、SnCl ₄、B ₂ H ₆（p 型）或 PH ₃（n 型）在 349 摄氏度、100 托下在 Ge 应变松弛缓冲器上的原位掺杂，它们本身在Si（001）衬底。我们的目标是用 GeSn:B 和 GeSn:P 代替以前 pin 结构中使用的硼和磷掺杂的 Ge 层。对于低 F(B ₂ H ₆ )/F(Ge ₂ H ₆ ) 和 F(PH ₃ )/2*F(Ge ₂ H ₆ ) ，波长色散 X 射线荧光 (WDXRF) 的 Sn 含量恒定在 6.5% 左右) 质量流量比 (MFR)。由于掺杂剂前体催化了 Ge 生长速率分量，因此对于更高的 MFR，它下降到 4.9% (GeSn:B) 和 6.0% (GeSn:P)。B原子浓度（来自二次离子质谱法（SIMS））随着MFR几乎线性增加，达到至多6.3 10 ¹⁹ cm ^{-3 的值}。基于电化学电容电压 (ECV) 测量，B 原子几乎完全具有电活性。WDXRF 和 SIMS 还使我们能够获得原子 P 浓度，其值高达 3.9 10 ²⁰ cm ^-3。可能是因为形成了 Sn _m P _nV 纳米团簇，最高流量的 P 电活化降低。只有在三个最高 MFR 下生长的 GeSn:B 层表现出一些 B 和/或 Sn 表面偏析。否则，存在沿<110> 带有交叉影线的光滑表面。