Brush scrubbing is commonly employed for cleaning contaminated polished wafers, especially after chemical mechanical polishing. Here we report the results from real-time video imaging of the brush cleaning of ∼90 nm ceria particles from thin oxide films on transparent glass substrates using evanescent wave microscopy to identify the interactions among the particles, brush, film and cleaning liquid. Two cleaning liquids, DI water (pH ∼ 6) and 0.1 M NH₄OH solution at pH ∼ 11, were used. It was found that purely hydrodynamic forces are unable to remove the ceria particles from the oxide film surface and direct contact between brush asperities and film is crucial for particle detachment to occur. However, such a direct contact also causes significant particle loading of the brush as well as redeposition of some of the already dislodged particles. Preventing such redeposition is crucial for efficient surface cleaning. The dislodged particles that are transferred into the fluid flow on the film continued to move without redepositing. Since the 0.1 M NH₄OH solution at high alkaline pH created an environment for charge repulsion among the ceria particles, PVA brush and oxide film, particle removal from the film is more rapid and somewhat more efficient compared to DI water.

刷洗通常用于清洁受污染的抛光晶片，尤其是在化学机械抛光之后。在这里，我们报告了使用渐逝波显微镜对来自透明玻璃基板上的薄氧化膜的约 90 nm 氧化铈颗粒的刷子清洁的实时视频成像结果，以识别颗粒、刷子、薄膜和清洁液之间的相互作用。两种清洁液，去离子水（pH ∼ 6）和 0.1 M NH ₄使用 pH 值约为 11 的 OH 溶液。发现纯粹的流体动力无法从氧化膜表面去除氧化铈颗粒，并且刷毛细部和膜之间的直接接触对于颗粒脱离的发生至关重要。然而，这种直接接触也会导致刷子的大量颗粒负载以及一些已经脱落的颗粒重新沉积。防止这种再沉积对于有效的表面清洁至关重要。转移到薄膜上的流体流中的脱落颗粒继续移动而不会再沉积。由于 0.1 M NH ₄高碱性 pH 值的 OH 溶液为氧化铈颗粒、PVA 刷和氧化膜之间的电荷排斥创造了环境，与去离子水相比，从膜中去除颗粒更快速且效率更高。