We researched the reduction of leakage current by Al doping in TiO₂ thin film. During the TiO₂ thin film deposition process, Al₂O₃ thin film deposition was used for Al doping. XPS analysis showed that the greater the amount of Al doping in TiO₂ thin film, the fewer oxygen vacancies were found. The n-type characteristic of TiO₂ thin films is reduced as oxygen vacancies are reduced. An anatase (211) peak was detected by GIXRD analysis, and crystallinity was reduced with greater Al doping; the full width half maximum showed the crystalline size was reduced. UV-visible analysis showed the energy bandgap increased as the crystalline size became smaller, and I-V measurements showed the current density decreased to 3 10⁻⁴ A cm⁻² (As-dep TiO₂: 10⁻¹ A cm⁻²) with Al doping. The dielectric constant remained above 20 even when doped with Al, confirming the superior properties of Al-doping TiO₂ thin film over conventional TiO₂ thin films.

我们研究了通过在TiO ₂薄膜中掺杂Al来降低漏电流。在TiO ₂薄膜沉积过程中，Al ₂ O ₃薄膜沉积用于Al掺杂。XPS分析表明，TiO ₂薄膜中Al掺杂量越大，发现的氧空位越少。TiO ₂的n型特性薄膜随着氧空位的减少而减少。GIXRD分析检测到锐钛矿（211）峰，Al掺杂量越大，结晶度越低；半峰全宽表明晶体尺寸减小。紫外-可见分析显示，随着晶体尺寸变小，能带隙增加，IV 测量显示电流密度降低至 3 10 ^-4 A cm ^-2 (As-dep TiO ₂ : 10 ^-1 A cm ^-2 )，Al兴奋剂。即使掺杂了铝，介电常数仍保持在 20 以上，这证实了掺杂铝的 TiO ₂薄膜优于传统 TiO ₂薄膜的性能。