Selective growth and micropatterning through a water lift-off (WLO) process utilizing a sacrificial amorphous CaO (a-CaO) layer were demonstrated to fabricate hetero-epitaxial all-oxides film capacitors. Patterned Pb(Zr,Ti)O₃ (PZT) and SrRuO₃ (SRO) films were grown on (100) SrTiO₃ (STO) substrate by pulsed laser deposition, and the subsequent lift-off process for target oxides was carried out using pure water. The results showed that selective growth and micropatterning of an all-oxides capacitor structure could be realized through WLO process using a-CaO as the sacrificial layer. Electron backscattered diffraction results revealed that SRO/PZT/SRO capacitor structures were grown hetero-epitaxially on the STO substrate. Furthermore, the electrical properties of patterned SRO/PZT/SRO film capacitors could be improved by suppressing the height of overgrown parts of the SRO bottom electrodes with a thick a-CaO sacrificial layer.

证明了通过利用牺牲非晶 CaO ( a -CaO) 层的水剥离 (WLO) 工艺进行选择性生长和微图案化来制造异质外延全氧化物薄膜电容器。通过脉冲激光沉积在 (100) SrTiO ₃ (STO) 衬底上生长图案化的 Pb(Zr,Ti)O ₃ (PZT) 和 SrRuO ₃ (SRO) 薄膜，然后使用以下方法进行目标氧化物的剥离工艺纯净水。结果表明，选择性生长和全氧化物电容器结构的微图案化可以通过WLO过程中使用来实现一个-CaO 作为牺牲层。电子背散射衍射结果表明 SRO/PZT/SRO 电容器结构在 STO 衬底上异质外延生长。此外，通过使用厚的a -CaO 牺牲层抑制 SRO 底部电极过度生长部分的高度，可以改善图案化 SRO/PZT/SRO 薄膜电容器的电性能。