Despite structural and processing-induced imperfections, wafer-scale chemical vapor deposited (CVD) graphene today is commercially available and has emerged as a versatile form that can be readily transferred to desired substrates for various nanoelectronic and spintronic applications. In particular, over the past decade, significant advancements in CVD graphene synthesis methods and experiments realizing high-quality charge and spin transport have been achieved. These include growth of large-grain graphene, new processing methods, high-quality electrical transport with high-carrier mobility, micron-scale ballistic transport, observations of quantum and fractional quantum Hall effect, as well as the spintronic performance of extremely long spin communication over tens of micrometers at room temperature with robust spin diffusion lengths and spin lifetimes. In this short review, we discuss the progress in recent years in the synthesis of high-quality, large-scale CVD graphene and improvement of the electrical and spin transport performance, particularly towards achieving ballistic and long-distance spin transport that show exceptional promise for next-generation graphene electronic and spintronic applications.

尽管存在结构和加工引起的缺陷，但如今晶圆级化学气相沉积 (CVD) 石墨烯已可商用，并已成为一种多功能形式，可以轻松转移到各种纳米电子和自旋电子应用所需的基板上。特别是在过去十年中，CVD 石墨烯合成方法和实验取得了重大进展，实现了高质量的电荷和自旋输运。其中包括大晶粒石墨烯的生长、新的加工方法、具有高载流子迁移率的高质量电传输、微米级弹道传输、量子和分数量子霍尔效应的观察、以及室温下数十微米的极长自旋通信的自旋电子性能，具有稳健的自旋扩散长度和自旋寿命。在这篇简短的评论中，我们讨论了近年来在合成高质量、大规模 CVD 石墨烯以及提高电和自旋输运性能方面的进展，特别是在实现弹道和长距离自旋输运方面的进展，这对下一代石墨烯电子和自旋电子应用。